Substrate handling device and processing chamber

ABSTRACT

A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, a second contact structure of the plurality of contact structures separated from the edge, a shape of the first contact structure is different from a shape of the second contact structure. The substrate reception area and the planar surface include a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No.16/533,948, filed Aug. 7, 2019, which is a divisional of U.S.application Ser. No. 15/601,079, filed May 22, 2017, now U.S. Pat. No.10,399,231, issued Sep. 3, 2019, which are incorporated herein byreference in their entireties.

BACKGROUND

In integrated circuit (IC) manufacturing, individual IC elements areformed and tested using various pieces of manufacturing equipment toperform multiple operations. Substrates on which the ICs are built aremoved between and within the various pieces of equipment while beingprotected from impurities that could compromise circuit function. Suchmovement often includes handling substrates with devices that contactthe substrates at multiple locations.

Manufacturing of IC substrates increasingly includes backside operationsin which various materials are used to form bottom layers. These bottomlayers often come into contact with substrate handling devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1D are diagrams of a substrate handling device, in accordancewith some embodiments.

FIGS. 2A-2B are diagrams of a substrate handling device, in accordancewith some embodiments.

FIG. 3 is a diagram of contact material surface patterns, in accordancewith some embodiments.

FIG. 4 is a flowchart of a method of aligning a substrate contactmaterial to a substrate material, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In various embodiments, a substrate handling device includes a pluralityof contact structures. Each contact structure of the plurality ofcontact structures includes a material having a hardness aligned to ahardness of a substrate material. Because of this hardness alignment,scratching or other damage to either the substrate or the substratehandling device is reduced compared to approaches in which the hardnessis not aligned with the hardness of the substrate material beingcontacted.

FIGS. 1A-1D are diagrams of a substrate handling device 100, inaccordance with some embodiments. FIG. 1A depicts a top view ofsubstrate handling device 100, and FIGS. 1B-1D depict cross-sectionalviews of substrate handling device 100 along line A-A′, in accordancewith some embodiments. In addition to substrate handling device 100,FIGS. 1A-1D depict a substrate 150.

Substrate handling device 100 includes an edge 105, a substratereception area 110 defined by edge 105, a plurality of contactstructures 120A, 120B, and 120C (collectively 120), and an aperture 130.In the embodiment depicted in FIG. 1A, substrate handling device 100includes four contact structures 120A, four contact structures 120B, anda single contact structure 120C. In various embodiments, substratehandling device 100 includes greater or fewer than four contactstructures 120A. In various embodiments, substrate handling device 100includes greater or fewer than four contact structures 120B. In variousembodiments, substrate handling device 100 includes greater than asingle contact structure 120C.

Substrate handling device 100 is a rigid structure configured to controla position of a substrate by supporting a weight of the substrate. Insome embodiments, substrate handling device 100 is configured to controlmultiple positions of the substrate by supporting lateral movement ofthe substrate while transporting the substrate from a first position toa second position.

In some embodiments, substrate handling device 100 is a robot blade of arobot arm. In some embodiments, substrate handling device 100 is acomponent of a processing chamber in an IC manufacturing environment. Insome embodiments, substrate handling device 100 is a component of a teststation. In some embodiments, substrate handling device 100 is onesubstrate handling device 100 of a plurality of substrate handlingdevices 100 of a substrate carrier.

Substrate handling device 100 includes one or more metals or othermaterials having rigidity and strength sufficient to support, and, insome embodiments, to transport, a substrate.

Edge 105 includes a substantially vertical portion of substrate handlingdevice 100 that separates substrate reception area 110 from a relativelythicker portion 103 of substrate handling device 100, thereby definingsubstrate reception area 110 within substrate handling device 100. Insome embodiments, edge 105 has a profile that includes portions inaddition to the substantially vertical portion.

In the embodiment depicted in FIG. 1A, edge 105 has an arc contour inplan view. In some embodiments, edge 105 has a straight-line contour. Insome embodiments, edge 105 has a contour that includes multiplesegments, and each segment has an arc or straight-line shape as depictedin a top view. In some embodiments, edge 105 includes multiple,non-continuous segments, and each segment has an arc or straight-linecontour.

Substrate reception area 110 is a relatively thinner portion ofsubstrate handling device 100 defined by edge 105 in comparison with thethicker portion forming the edge. Substrate reception area 110 has asubstantially planar upper surface 112. In some embodiments, uppersurface 112 is perpendicular to edge 105.

Plurality of contact structures 120 includes contact structures 120Apositioned in substrate reception area 110 near edge 105, contactstructures 120B positioned in substrate reception area 110 distal fromedge 105, and contact structure 120C at the substantially verticalportion of edge 105.

Each contact structure 120A includes a top surface 122A, each contactstructure 120B includes a top surface 122B, and contact structure 120Cincludes a side surface 122C. In some embodiments, plurality of contactstructures 120 includes more than one contact structure 120C, and eachcontact structure 120C includes a side surface 122C.

Each contact structure 120A extends above upper surface 112, and isthereby configured so that, in operation, top surface 122A contacts asubstrate, e.g. substrate 150, being supported in substrate receptionarea 110, at a position near edge 105. Each contact structure 120Bextends above upper surface 112, and is thereby configured so that, inoperation, top surface 122B contacts a substrate, e.g. substrate 150,being supported in substrate reception area 110, at a position distalfrom edge 105.

Contact structure 120C extends laterally from edge 105, and is therebyconfigured so that, in operation, side surface 122C is capable ofcontacting a substrate, e.g. substrate 150, being supported, and in someembodiments transported, in substrate reception area 110, at a positionalong edge 105. In the embodiment depicted in FIG. 1B, side surface 122Cis substantially vertical, thereby being configured so that, inoperation, side surface 122C contacts a sidewall 152 of substrate 150.

In the embodiment depicted in FIG. 1B, contact structure 120C isattached to edge 105 so as to be located at and extend laterally fromedge 105. In some embodiments, contact structure 120C is attached toupper surface 112 so as to be located at and extend laterally from edge105.

In the embodiment depicted in FIG. 1C, side surface 122C includes ahorizontal component, thereby being configured so that, in operation,side surface 122C contacts a corner 154 of substrate 150.

In the embodiment depicted in FIG. 1D, side surface 122C includes ahorizontal component, plurality of contact structures 120 does notinclude contact structures 120A, and is thereby configured so that, inoperation, a substrate, e.g. substrate 150, is supported by contactstructure 120C along edge 105 and by contact structures 120B distal toedge 105.

In some embodiment depicted in FIGS. 1C and 1D, contact structure 120Cis attached to edge 105 so as to be located at and extend laterally fromedge 105. In some embodiments depicted in FIGS. 1C and 1D, contactstructure 120C is attached to upper surface 112 so as to be located atand extend laterally from edge 105.

Each of top surfaces 122A and 122B and side surface 122C is a surface ofa contact material having a hardness aligned to a hardness of a materialof a substrate, e.g. substrate 150. In some embodiments, the contactmaterial has a hardness aligned to the hardness of a substrate material.In some embodiments, one or more of contact structures 120A, 120B, or120C includes only the contact material. In some embodiments, one ormore of contact structures 120A, 120B, or 120C includes one or morematerials in addition to the contact material.

In some embodiments, one or both of the contact or substrate materialincludes silicon, silicon dioxide, silicon nitride, silicon carbide, ametal, a metal alloy, a metal oxide, or a polymer.

In some embodiments, material hardness is determined based on the Mohsscale of mineral hardness. In some embodiments, the contact materialhaving the hardness aligned to the hardness of the substrate material isbased on a range of values determined by a Mohs hardness scale value ofthe substrate material. In some embodiments, the contact material havingthe hardness aligned to the hardness of the substrate material is basedon the contact material having a Mohs hardness scale value within two ofa Mohs hardness scale value of the substrate material. In someembodiments, the contact material having the hardness aligned to thehardness of the substrate material is based on the contact materialhaving a Mohs hardness scale value within one of a Mohs hardness scalevalue of the substrate material.

In a first non-limiting example, the substrate material is siliconnitride, having a Mohs hardness scale value of 9.5. In this case, arange for the contact material corresponding to having a Mohs hardnessscale value within one of the Mohs hardness scale value of the substratevalue would be from 8.5 through 10.5. A contact material of aluminumoxide, having a Mohs hardness scale value of 9.0, within the range of8.5 through 10.5, would have a hardness aligned with the hardness ofsilicon nitride, in this example.

In a second non-limiting example, the substrate material is silicondioxide, having a Mohs hardness scale value of 7.0. In this case, arange for the contact material corresponding to having a Mohs hardnessscale value within two of the Mohs hardness scale value of the substratevalue would be from 5.0 through 9.0. A contact material of aluminumoxide, having a Mohs hardness scale value of 9.0, within the range of5.0 through 9.0, would have a hardness aligned with the hardness ofsilicon dioxide, in this example. A contact material of quartz, having aMohs hardness scale value of 7.0, within the range of 5.0 through 9.0,would also have a hardness aligned with the hardness of silicon dioxide,in this example.

In some embodiments, one or more of top surface 122A, top surface 122B,or side surface 122C includes a pattern, e.g. one or more of contactmaterial surface patterns 300A, 300B, or 300C, discussed below withrespect to FIG. 3, that increases a coefficient of static friction ofthe one or more of top surface 122A, top surface 122B, or side surface122C. In some embodiments, compared to a planar surface, the patternincreases the coefficient of static friction by a factor of from 2 to10.

Aperture 130 is an opening in substrate handling device 100 configuredto enable substrate handling device 100 to be mechanically coupled witha robot arm or other controlling apparatus. In the embodiment depictedin FIG. 1A, aperture 130 is located in substrate reception area 110. Insome embodiments, aperture 130 is located at a position on substratehandling device 100 outside of substrate reception area 110. In someembodiments, substrate handling device 100 does not include aperture130, and substrate handling device 100 is otherwise configured to bemechanically coupled with a robot arm or other controlling apparatus.

In the embodiment depicted in FIGS. 1A-1D, substrate reception area 110is bifurcated, and contact structures 120B are separated by a gap andaligned in a substantially straight line. In some embodiments, substratereception area 110 has a Y-shape, and contact structures 120B areseparated by a gap and aligned along an arc corresponding to a perimeterof a substrate, e.g. substrate 150. In some embodiments, substratereception area 110 is single-ended, and contact structures 120B arearranged in a straight line or an arc without a gap.

In some embodiments, plurality of contact structures 120 includescontact structures in addition to contact structures 120A, 120B, and120C. In some embodiments, plurality of contact structures 120 includesone or more contact structures (not shown) positioned at or near acenter of substrate reception area 110 and configured to contact abackside of a substrate, e.g. substrate 150, at or near a center of thesubstrate.

By including the features described above, substrate handling device 100is configured to contact a substrate using a contact material having ahardness aligned with the hardness of the substrate material beingcontacted. Because of this hardness alignment, scratching or otherdamage to either the substrate or the substrate handling device isreduced compared to approaches in which the hardness is not aligned withthe hardness of the substrate material being contacted.

Reducing substrate damage reduces the risk of damaging a circuit orstructure on the substrate. Reducing substrate handling device damagecan increase the useful lifetime of the substrate handling device.Reducing substrate and substrate handling device damage also reduces therisk of releasing particles from substrate and substrate handling devicesurfaces that could introduce impurities capable of compromising circuitfunction.

In some embodiments, by including one or more of top surface 122A, topsurface 122B, or side surface 122C, substrate handling device 100 isalso capable of contacting a substrate using a surface with a highercoefficient of friction than that of a surface that does not include apattern that increases the coefficient of static friction. The increasedcoefficient of static friction reduces the likelihood of slippage whilesupporting, and in some embodiments transporting, substrates, therebyreducing the likelihood of scratching or other damage from abrasionbetween a substrate and substrate handling device 100.

FIGS. 2A-2C are diagrams of a substrate handling device 200, inaccordance with some embodiments. FIG. 2A depicts a top view ofsubstrate handling device 200, and FIG. 2B depicts a cross-sectionalview of substrate handling device 200 along line B-B′. In addition tosubstrate handling device 200, FIGS. 2A-2B depict substrate 150,discussed above with respect to FIGS. 1A-1D.

Substrate handling device 200 includes a body 205, a plurality of liftpins 210 retractable within body 205, and a plurality of contactstructures 220 corresponding to plurality of lift pins 210. In someembodiments, substrate handling device 200 is a component of aprocessing chamber in an IC manufacturing environment. In someembodiments, substrate handling device 200 is a component of a teststation.

Body 205 is a disk having a substantially planar upper surface or uppersurface portion 202. Body 205 includes one or more metals or othermaterials having rigidity and strength sufficient to support a substrateduring one or more IC processing operations. In some embodiments, body205 is a platen. In some embodiments, body 205 is configured to rotate.In some embodiments, body 205 is configured to increase and/or decreasea temperature of body 205.

Plurality of lift pins 210 is configured to support a substrate duringloading and unloading of the substrate from body 205 by raising andlowering the substrate relative to upper surface or upper surfaceportion 202. In some embodiments, plurality of lift pins 210 includesthree lift pins 210. In some embodiments, plurality of lift pins 210includes more than three lift pins 210.

Each contact structure 220 of plurality of contact structures 220 ispositioned atop a corresponding lift pin 210 of plurality of lift pins210, and includes a top surface 222.

Plurality of contact structures 220 is similar to contact structures120A and 120B of plurality of contact structures 120, and top surfaces222 are similar to top surfaces 122A and 122B, discussed above withrespect to substrate handling device 100 and FIGS. 1A-1D.

By including the features of plurality of contact structures 220,substrate handling device 200 is configured to contact a substrate usinga contact material having a hardness aligned with the hardness of thesubstrate material being contacted. Substrate handling device 200 isthereby capable of providing the advantages discussed above with respectto substrate handling device 100.

In some embodiments, by including top surfaces 222 patterned to haveincreased coefficients of static friction, substrate handling device 200is configured to provide the additional advantages discussed above withrespect to substrate handling device 100.

FIG. 3 is a diagram of contact material surface patterns 300A, 300B, and300C, in accordance with some embodiments. FIG. 3 depicts a top view ofeach of contact material surface patterns 300A, 300B, and 300C. Each ofcontact material surface patterns 300A, 300B, and 300C is usable as acontact material surface pattern of one or more of top surfaces 122A,top surfaces 122B, or side surface 122C, discussed above with respect tosubstrate handling device 100 and FIGS. 1A-1D.

Contact material surface pattern 300A is a ridge pattern including aplurality of ridges 310 extending upwardly from a planar surface 302A.In some embodiments, individual ridges of plurality of ridges 310 extendparallel to each other.

Each ridge of plurality of ridges 310 extends equidistantly above planarsurface 302A. In some embodiments, plurality of ridges 310 extends aboveplanar surface 302A by a distance of 2 micrometers (μm) to 10 μm. Insome embodiments, individual ridges of plurality of ridges 310 areseparated by a distance of 5 μm to 100 μm.

Contact material surface pattern 300B is a groove pattern including aplurality of grooves 320 extending downwardly from a planar surface302B. In some embodiments, individual grooves of plurality of grooves320 extend parallel to each other.

Each groove of plurality of grooves 320 extends equidistantly belowplanar surface 302B. In some embodiments, plurality of grooves 320extends below planar surface 302B by a distance of 2 μm to 10 μm. Insome embodiments, individual grooves of plurality of grooves 320 areseparated by a distance of 5 μm to 100 μm.

Contact material surface pattern 300C is a pyramid pattern including aplurality of pyramids 330 extending upwardly from a planar surface 302C.In some embodiments, individual pyramids of plurality of pyramids 330have a rectangular base. In some embodiments, individual pyramids ofplurality of pyramids 330 have a circular base.

In some embodiments, plurality of pyramids 330 is arranged in an arrayof rows and columns. In some embodiments, plurality of pyramids 330 isarranged in a series of parallel lines. In some embodiments, pluralityof pyramids 330 is arranged in a series of intersecting lines.

Each pyramid of plurality of pyramids 330 extends equidistantly aboveplanar surface 302C. In some embodiments, plurality of pyramids 330extends above planar surface 302C by a distance of 2 μm to 10 μm. Insome embodiments, individual pyramids of plurality of pyramids 330 areseparated by a distance of 5 μm to 100 μm.

By including plurality of ridges 310, plurality of grooves 320, andplurality of pyramids 330, each of contact material surface patterns300A, 300B, and 300C, respectively, provide a high coefficient of staticfriction compared to substantially planar contact material surfacepatterns.

By providing a relatively high coefficient of static friction, each ofcontact material surface patterns 300A, 300B, and 300C is usable toprovide the advantages discussed above with respect to top surfaces122A, 122B, and 222, and side surface 122C.

FIG. 4 is a flowchart of a method 400 of aligning a substrate contactmaterial to a substrate material, in accordance with one or moreembodiments. Method 400 is implemented using a substrate handling devicesuch as substrate handling devices 100 or 200, discussed above withrespect to FIGS. 1A-1D and 2A-2B, respectively.

The sequence in which the operations of method 400 are depicted in FIG.4 is for illustration only; the operations of method 400 are capable ofbeing executed in sequences that differ from that depicted in FIG. 4. Insome embodiments, operations in addition to those depicted in FIG. 4 areperformed before, between and/or after the operations depicted in FIG.4.

At operation 410, a hardness of a substrate material is determined. Insome embodiments, determining the hardness of the substrate materialincludes determining a Mohs hardness scale value of the substratematerial. In some embodiments, determining the hardness of the substratematerial includes looking up a hardness value in a table, a database, orother suitable reference. In some embodiments, determining the hardnessof the substrate material includes performing a test on the substratematerial.

In some embodiments, determining the hardness of the substrate materialincludes determining the hardness of a material from which the substrateis formed. In some embodiments, determining the hardness of thesubstrate material includes determining the hardness of a materialdifferent from the material from which the substrate is formed. In someembodiments, determining the hardness of the substrate material includesdetermining the hardness of a material layer deposited on a backside ofthe substrate.

At operation 420, a hardness of a substrate contact material is matchedto the hardness of the substrate material. In some embodiments, matchingthe hardness of the substrate contact material to the hardness of thesubstrate material includes matching hardness based on the Mohs scale ofmineral hardness. In some embodiments, matching the hardness of thesubstrate contact material to the hardness of the substrate material isbased on a range of values determined by a Mohs hardness scale value ofthe substrate material.

In some embodiments, matching the hardness of the substrate contactmaterial to the hardness of the substrate material is based on a rangeof Mohs scale values discussed above with respect to top surfaces 122Aand 122B and side surface 122C, and FIGS. 1A-1D.

At operation 430, in some embodiments, the substrate contact materialhaving the hardness matched to the hardness of the substrate material isadded to a substrate handling device. In some embodiments, adding thesubstrate contact material includes attaching a plurality of contactstructures to the substrate handling device.

In some embodiments, the substrate handling device is a robot blade, andadding the substrate contact material includes attaching a substratecontact structure along an edge configured to contact a perimeter of asubstrate or on a surface configured to contact a backside of thesubstrate. In some embodiments, the substrate handling device is asubstrate carrier, and adding the substrate contact material includesattaching a substrate contact structure at a position configured tocontact a perimeter or a backside of a substrate.

In some embodiments, the substrate handling device is substrate handlingdevice 100, and adding the substrate contact material includes addingplurality of contact structures 120, discussed above with respect toFIGS. 1A-1D.

In some embodiments, the substrate handling device includes a lift pin,and adding the substrate contact material comprises attaching a contactstructure to a top surface of the lift pin. In some embodiments, thesubstrate handling device is substrate handling device 200, and addingthe substrate contact material includes adding plurality of contactstructures 220, discussed above with respect to FIGS. 2A-2B.

At operation 440, in some embodiments, a substrate handling device isselected from a plurality of substrate handling devices based on thesubstrate contact material having the hardness matched to the hardnessof the substrate material. In some embodiments, the substrate handlingdevice is a robot blade, and selecting the substrate handling deviceincludes selecting the robot blade from a plurality of robot bladesbased on the hardness of a substrate contact material included in aplurality of contact structures on each robot blade of the plurality ofrobot blades.

In some embodiments, the substrate handling device is a substratecarrier, and selecting the substrate handling device includes selectingthe substrate carrier from a plurality of substrate carriers based onthe hardness of a substrate contact material included in a plurality ofcontact structures on each substrate carrier of the plurality ofsubstrate carriers.

In some embodiments, selecting the substrate handling device includesselecting substrate handling device 100 from a plurality of substratehandling devices 100, discussed above with respect to FIGS. 1A-1D.

In some embodiments, the substrate handling device includes a lift pin,and selecting the substrate handling device includes selecting thesubstrate handling device from a plurality of substrate handling devicesbased on the hardness of a substrate contact material included incontact structure on the lift pin. In some embodiments, selecting thesubstrate handling device includes selecting substrate handling device200 from a plurality of substrate handling devices 200, discussed abovewith respect to FIGS. 2A-2B.

At operation 450, in some embodiments, a surface of the substratecontact material is modified to increase a coefficient of staticfriction of the surface of the substrate handling contact material. Insome embodiments, modifying the surface of the substrate contactmaterial includes using an etch process. In some embodiments, modifyingthe surface of the substrate contact material includes using adeposition process. In some embodiments, modifying the surface of thesubstrate contact material includes using a laser texturing process. Insome embodiments, modifying the surface of the substrate contactmaterial includes using an electron beam texturing process.

In some embodiments, modifying the surface of the substrate contactmaterial includes forming a pattern on the surface of the substratecontact material. In some embodiments, modifying the surface of thesubstrate contact material includes forming a ridge pattern. In someembodiments, modifying the surface of the substrate contact materialincludes forming contact material surface pattern 300A, discussed abovewith respect to FIG. 3.

In some embodiments, modifying the surface of the substrate contactmaterial includes forming a groove pattern. In some embodiments,modifying the surface of the substrate contact material includes formingcontact material surface pattern 300B, discussed above with respect toFIG. 3.

In some embodiments, modifying the surface of the substrate contactmaterial includes forming a pyramid pattern. In some embodiments,modifying the surface of the substrate contact material includes formingcontact material surface pattern 300C, discussed above with respect toFIG. 3.

In some embodiments, modifying the surface of the substrate contactmaterial includes modifying one or more of top surface 122A, top surface122B, or side surface 122C, discussed above with respect to substratehandling device 100 and FIGS. 1A-1D.

In some embodiments, modifying the surface of the substrate contactmaterial includes modifying top surfaces 222, discussed above withrespect to substrate handling device 200 and FIGS. 2A-2B.

At operation 460, in some embodiments, a position of a substrate iscontrolled using a substrate handling device. The substrate handlingdevice includes the substrate contact material, and controlling theposition of the substrate using the substrate handling device includescontacting the substrate material with the substrate contact material.

In some embodiments, the substrate handling device is a robot blade, andcontrolling the position of the substrate using the substrate handlingdevice includes contacting the substrate material with the substratecontact material included in a contact structure on the robot blade.

In some embodiments, the substrate handling device is a substratecarrier, and controlling the position of the substrate using thesubstrate handling device includes contacting the substrate materialwith the substrate contact material included in a contact structure onthe substrate carrier.

In some embodiments, controlling the position of the substrate using thesubstrate handling device includes controlling the position of thesubstrate using substrate handling device 100, discussed above withrespect to FIGS. 1A-1D.

In some embodiments, the substrate handling device includes a lift pin,and controlling the position of the substrate using the substratehandling device includes contacting the substrate material with thesubstrate contact material included in a contact structure on a topsurface of the lift pin.

In some embodiments, controlling the position of the substrate using thesubstrate handling device includes controlling the position of thesubstrate using substrate handling device 200, discussed above withrespect to FIGS. 2A-2B.

By executing the operations of method 400, a substrate is contactedusing a contact material having a hardness aligned with the hardness ofthe substrate material being contacted. Because of this hardnessalignment, scratching or other damage to either the substrate or thesubstrate handling device is reduced compared to approaches in which thehardness is not aligned with the hardness of the substrate materialbeing contacted. Executing the operations of method 400 thereby providesthe advantages discussed above with respect to substrate handling device100.

In some embodiments, by performing operation 450 to increase thecoefficient of static friction, method 400 provides the additionaladvantages discussed above with respect to substrate handling device100.

An aspect of this description relates to a substrate handling device.The substrate handling device includes a substrate reception areadefined by an edge. The substrate reception area includes a planarsurface, wherein the edge extends upward from the planar surface. Thesubstrate reception area further includes a plurality of contactstructures extending upwards from the planar surface, wherein a firstcontact structure of the plurality of contact structures directlycontacts a side surface of the edge, a second contact structure of theplurality of contact structures separated from the edge, a shape of thefirst contact structure is different from a shape of the second contactstructure. The substrate reception area and the planar surface include afirst material. Each contact structure of the plurality of contactstructures includes a second material different from the first material,and the second material has a hardness aligned to a hardness of asubstrate material. In some embodiments, the first contact structureincludes a side surface angled with respect to the planar surface. Insome embodiments, a top surface of the second contact structure isparallel to the planar surface. In some embodiments, a space between thefirst contact structure and the second contact structure is free ofother contact structures of the plurality of contact structures. In someembodiments, the edge has an arc contour in a plan view. In someembodiments, the edge includes multiple non-continuous segments. In someembodiments, each of the multiple non-continuous segments has an arccontour. In some embodiments, each of the multiple non-continuoussegments has a straight-line contour. In some embodiments, the substratereception area is thinner than the edge. In some embodiments, a top-mostsurface of the first contact structure is coplanar with a top-mostsurface of the edge. In some embodiments, each of the plurality ofcontact structures includes silicon, silicon dioxide, silicon nitride,silicon carbide, a metal, a metal alloy, a method oxide, or a polymer.In some embodiments, the hardness of the first material is within two ofa Mohs hardness scale of the second material. In some embodiments, thesubstrate handling device further includes a lift pin, wherein thesecond contact structure is attached to the lift pin. In someembodiments, the lift pin is retractable into the substrate receptionarea.

An aspect of this description relates to a processing chamber. Theprocessing chamber includes a substrate reception area, wherein thesubstrate reception area includes a planar surface, and the substratereception area includes a first material. The processing chamber furtherincludes an edge surrounding at least a portion of the substratereception area, wherein the edge protrudes perpendicular to the planarsurface. The processing chamber further includes a first contactstructure directly contacting a side surface of the edge. The processingchamber further includes a second contact structure separated from theedge, wherein a shape of the first contact structure is different from ashape of the second contact structure, each of the first contactstructure and the second contact structure includes a second materialdifferent from the first material, and the second material has ahardness aligned to a hardness of a substrate material. In someembodiments, a top-most surface of the second contact structure isparallel to the planar surface. In some embodiments, a top-most surfaceof the first contact structure is angled with respect to the planarsurface. In some embodiments, the top-most surface of the first contactstructure is angled with respect to the side surface of the edge. Insome embodiments, the processing chamber further includes a thirdcontact structure between the first contact structure and the secondcontact structure.

An aspect of this description relates to a substrate handling device.The substrate handling device includes a substrate reception area,wherein the substrate reception area includes a planar surface, and thesubstrate reception area includes a first material. The substratehandling device further includes an edge surrounding at least a portionof the substrate reception area, wherein the edge protrudesperpendicular to the planar surface. The substrate handling devicefurther includes a first contact structure directly contacting a sidesurface of the edge. The substrate handling device further includes asecond contact structure separated from the edge, wherein a shape of thefirst contact structure is different from a shape of the second contactstructure. The substrate handling device further includes a thirdcontact structure between the first contact structure and the secondcontact structure, wherein each of the first contact structure, thesecond contact structure, and the third contact structure includes asecond material different from the first material, and the secondmaterial has a hardness aligned to a hardness of a substrate material.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A substrate handling device comprising: asubstrate reception area defined by an edge, the substrate receptionarea comprising: a planar surface, wherein the edge extends upward fromthe planar surface; and a plurality of contact structures extendingupwards from the planar surface, wherein a first contact structure ofthe plurality of contact structures directly contacts a side surface ofthe edge, a second contact structure of the plurality of contactstructures separated from the edge, a shape of the first contactstructure is different from a shape of the second contact structure, thesubstrate reception area and the planar surface comprise a firstmaterial, and each contact structure of the plurality of contactstructures comprises a second material different from the firstmaterial, and the second material has a hardness aligned to a hardnessof a substrate material.
 2. The substrate handling device of claim 1,wherein the first contact structure comprises a side surface angled withrespect to the planar surface.
 3. The substrate handling device of claim1, wherein a top surface of the second contact structure is parallel tothe planar surface.
 4. The substrate handling device of claim 1, whereina space between the first contact structure and the second contactstructure is free of other contact structures of the plurality ofcontact structures.
 5. The substrate handling device of claim 1, whereinthe edge has an arc contour in a plan view.
 6. The substrate handlingdevice of claim 1, wherein the edge comprises multiple non-continuoussegments.
 7. The substrate handling device of claim 6, wherein each ofthe multiple non-continuous segments has an arc contour.
 8. Thesubstrate handling device of claim 6, wherein each of the multiplenon-continuous segments has a straight-line contour.
 9. The substratehandling device of claim 1, wherein the substrate reception area isthinner than the edge.
 10. The substrate handling device of claim 1,wherein a top-most surface of the first contact structure is coplanarwith a top-most surface of the edge.
 11. The substrate handling deviceof claim 1, wherein each of the plurality of contact structurescomprises silicon, silicon dioxide, silicon nitride, silicon carbide, ametal, a metal alloy, a method oxide, or a polymer.
 12. The substratehandling device of claim 1, wherein the hardness of the first materialis within two of a Mohs hardness scale of the second material.
 13. Thesubstrate handling device of claim 1, further comprising a lift pin,wherein the second contact structure is attached to the lift pin. 14.The substrate handling device of claim 13, wherein the lift pin isretractable into the substrate reception area.
 15. A processing chambercomprising: a substrate reception area, wherein the substrate receptionarea comprises a planar surface, and the substrate reception areacomprises a first material; an edge surrounding at least a portion ofthe substrate reception area, wherein the edge protrudes perpendicularto the planar surface; a first contact structure directly contacting aside surface of the edge; a second contact structure separated from theedge, wherein a shape of the first contact structure is different from ashape of the second contact structure, each of the first contactstructure and the second contact structure comprises a second materialdifferent from the first material, and the second material has ahardness aligned to a hardness of a substrate material.
 16. Theprocessing chamber of claim 15, wherein a top-most surface of the secondcontact structure is parallel to the planar surface.
 17. The processingchamber of claim 15, wherein a top-most surface of the first contactstructure is angled with respect to the planar surface.
 18. Theprocessing chamber of claim 17, wherein the top-most surface of thefirst contact structure is angled with respect to the side surface ofthe edge.
 19. The processing chamber of claim 17, further comprising athird contact structure between the first contact structure and thesecond contact structure.
 20. A substrate handling device comprising: asubstrate reception area, wherein the substrate reception area comprisesa planar surface, and the substrate reception area comprises a firstmaterial; an edge surrounding at least a portion of the substratereception area, wherein the edge protrudes perpendicular to the planarsurface; a first contact structure directly contacting a side surface ofthe edge; a second contact structure separated from the edge, wherein ashape of the first contact structure is different from a shape of thesecond contact structure; and a third contact structure between thefirst contact structure and the second contact structure, wherein eachof the first contact structure, the second contact structure, and thethird contact structure comprises a second material different from thefirst material, and the second material has a hardness aligned to ahardness of a substrate material.